Device having multiple channels with calibration circuit shared by multiple channels

ABSTRACT

An apparatus includes a first channel, a second channel and a calibration circuit. The first channel includes a first command control circuit. The second channel includes a second command control circuit independent of the first command control circuit. The calibration circuit is shared by the first channel and the second channel to generate a calibration code responsive to a calibration command generated responsive to a first calibration command from the first command control circuit and a second calibration command from the second command control circuit.

This application is a continuation of U.S. application Ser. No.15/997,417, filed Jun. 4, 2018, U.S. Pat. No. 10,339,984 issued Jul. 2,2019, which is a continuation of U.S. application Ser. No. 15/490,690,filed Apr. 18, 2017, U.S. Pat. No. 10,026,457 issued Jul. 17, 2018,which is a continuation of U.S. application Ser. No. 14/695,837, filedApr. 24, 2015, U.S. Pat. No. 9,666,245 issued May 30, 2017, which isbased upon and claims the benefit of priority from Japanese patentapplication No. 2014-105195 filed on May 21, 2014. These applicationsand patents are incorporated by reference herein in their entirety andfor all purposes.

BACKGROUND Field of the Invention

This invention relates to a semiconductor device, in particular, asemiconductor device that has calibration circuit adjusting impedance ofdata output circuit.

Description of the Related Art

A semiconductor device such as a DRAM (Dynamic Random Access Memory) isprovided with a data output circuit for outputting data to outside. Thedata output circuit is designed so as to obtain desired impedance whenactivated. However, due to the influence from process variations,temperature changes, etc., the impedance as designed is not alwaysobtained. Therefore, in a semiconductor device in which the impedance ofa data output circuit has to be controlled with high accuracy, animpedance adjustment circuit called a calibration circuit is built (seePatent Documents 1, 2).

Incidentally, recently, a semiconductor device of a type that it isdivided into a plurality of channels has been proposed. The channels arecircuit blocks which can be independently accessed, and each of thechannels is provided with a memory cell array, an access controlcircuit, external terminals, etc. Basically all circuits are separatedamong the channels, the channels are operated in synchronization withmutually different clock signals, and mutually different externalterminals are used also for reception of command/address signals andinput/output of data. Thus, each of the channels can be considered as anindependent single semiconductor device and, regarding this point, isdistinguished from an access unit called a bank.

[Patent document 1] Japanese Laid-Open Patent Publication No.2011-119632 (English equivalent U.S. Pat. Pub. No. 2011-0128038)

[Patent document 2] Japanese Laid-Open Patent Publication No.2006-203405 (English equivalent U.S. Pat. Pub. No. 2006-0158198)

SUMMARY

In one embodiment, there is provided an apparatus that includes a firstchannel, a second channel and a calibration circuit. The first channelincludes a first command control circuit, a first memory cell arrayconfigured to be controlled by the first command control circuit and afirst data output circuit configured to output first data from the firstmemory cell array with first impedance controlled responsive to a firstcalibration code. The second channel is provided independently of thefirst channel and includes a second command control circuit, a secondmemory cell array configured to be controlled by the second commandcontrol circuit and a second data output circuit configured to outputsecond data from the second memory cell array with second impedancecontrolled responsive to a second calibration code. The calibrationcircuit is configured to provide the first calibration code responsiveto a first calibration control signal from the first command controlcircuit and the second calibration code responsive to a secondcalibration control signal from the second command control circuit.

In another embodiment, there is provided an apparatus that includes acontroller and a first memory device. The controller includes a firstcore comprising a first command terminal and a first data terminal and asecond core comprising a second command terminal and a second dataterminal. The first core and the second core are configured to issue afirst calibration command to the first command terminal and a secondcalibration command to the second command terminal independently of eachother. The first memory device includes a first channel, a secondchannel and a calibration circuit. The first channel includes a thirdcommand terminal coupled to the first command terminal, a third dataterminal coupled to the first data terminal and a first data outputcircuit coupled to the third data terminal. The second channel includesa fourth command terminal coupled to the second command terminal, afourth data terminal coupled to the second data terminal and a seconddata output circuit coupled to the fourth data terminal. The calibrationcircuit is configured to provide a calibration code responsive to eachof the first calibration command and the second calibration command.

In still another embodiment, there is provided an apparatus thatincludes a calibration circuit configured to generate a calibration coderesponsive to a command signal and an arbiter configured to be suppliedwith a first calibration command and a second calibration commandindependently of each other and arbitrate the first calibration commandand the second calibration command to provide the command signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an overall configuration of a semiconductordevice according to an embodiment of the present invention;

FIG. 2 is a schematic plan view for explaining a layout of asemiconductor device 10;

FIG. 3 is a schematic plan view for explaining a layout of a calibrationcircuit;

FIG. 4 is a block diagram showing a configuration of a channel CHA;

FIG. 5 is a block diagram showing a configuration of a channel CHB;

FIG. 6 is a drawing for explaining differences in the waveforms of readdata DQA depending on operation modes; wherein, a symbol V30 representsthe waveform of the read data DQA in a case in which a first operationmode is specified, and a symbol V25 represents the waveform of the readdata DQA in a case in which a second operation mode is specified;

FIG. 7 (A) is a schematic drawing for explaining a method of causing theread data to be a high level, and FIG. 7 (B) is a schematic drawing forexplaining a method of causing write data to be a high level;

FIG. 8 is a block diagram showing a configuration of a data outputcircuit 41A contained in the channel CHA;

FIG. 9 is a circuit diagram of a pull up unit PU;

FIG. 10 is a circuit diagram of a pull down unit PD;

FIG. 11 is a block diagram extracting and showing a circuit blockrelated to a calibration operation;

FIG. 12 is a table for explaining the relation between the types ofreset requests and circuit blocks serving as reset objects in thecalibration circuit;

FIG. 13 is a circuit diagram of an arbiter 200;

FIG. 14 is a first operation waveform diagram for explaining operationsof an arbiter 200;

FIG. 15 is a second operation waveform diagram for explaining operationsof the arbiter 200;

FIG. 16 is a third operation waveform diagram for explaining operationsof the arbiter 200;

FIG. 17 is a fourth operation waveform diagram for explaining operationsof the arbiter 200;

FIG. 18 is a circuit diagram of a promotion circuit 250 according to amodification example;

FIG. 19 is a circuit diagram of a general Set-Reset latch circuit 260;

FIG. 20 is a waveform diagram for explaining operations of a Set-Resetlatch circuit 260;

FIG. 21 is a waveform diagram for explaining operations of the promotioncircuit 250;

FIG. 22 is a circuit diagram of a calibration control signal generationcircuit 400;

FIG. 23 is a waveform diagram for explaining operations of thecalibration control signal generation circuit 400;

FIG. 24 is a block diagram of a calibration circuit 110;

FIG. 25 is a circuit diagram of a multiplexer 130;

FIG. 26 is a circuit diagram of a latch circuit 132;

FIG. 27 is a block diagram showing a configuration of a relay circuit300A;

FIG. 28 is a block diagram showing a configuration of a relay circuit300B;

FIG. 29 is a timing chart for explaining operations of the multiplexer130 and the relay circuit 300A;

FIG. 30 is a drawing showing an example of changes of adjustment codesretained in registers;

FIG. 31 is a drawing showing another example of changes of theadjustment codes retained in the registers;

FIG. 32 is a circuit diagram showing part of the calibration circuit 110according to a modification example; and

FIG. 33 is a block diagram showing a configuration of the relay circuit300A according to a modification example.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, a preferred embodiment of the present invention will beexplained in detail with reference to accompanying drawings.

FIG. 1 is a block diagram showing a configuration of a system 1 providedwith semiconductor devices 10 according to the preferred embodiment ofthe present invention.

Even a semiconductor device which is provided with a plurality ofchannels can employ a configuration in which part of the circuits suchas a calibration circuit is shared. In this case, since it isconceivable that calibration commands which are issued to the respectivechannels compete with one another, the manner of operating the sharedcalibration circuit has to be studied.

The system 1 shown in FIG. 1 is provided with the plurality ofsemiconductor devices 10 and a controller 2, which controls them. Eachof the semiconductor devices 10 is not particularly limited to, but is aLPDDR4 (Low Power Double Data Rate 4) type DRAM integrated on a singlesemiconductor chip. Each of the semiconductor devices 10 is providedwith two channels CHA and CHB to which mutually different externalterminals are allocated. The channel CHA carries out read operations andwrite operations based on command/address signals CAA and external clocksignals CKA and /CKA supplied from a first core portion of thecontroller 2, and the channel CHB carries out read operations and writeoperations based on command/address signals CAB and external clocksignals CKB and /CKB supplied from a second core portion of thecontroller 2.

The command address signals CAA and the external clock signals CKA and/CKA are commonly supplied to command/address terminals 21A and clockterminals 22A of the plurality of semiconductor devices 10 via acommand/address bus 3A and a clock bus 4A, respectively. Thecommand/address signals CAA and the external clock signals CKA and /CKAare supplied to the channels CHA, thereby carrying out access operationswith respect to memory cell arrays contained in the channels CHA.

The command/address signals CAB and the external clock signals CKB and/CKB are commonly supplied to command/address terminals 21B and clockterminals 22B of the plurality of semiconductor devices 10 via acommand/address bus 3B and a clock bus 4B, respectively. Thecommand/address signals CAB and the external clock signals CKB and /CKBare supplied to the channels CHB, thereby carrying out access operationswith respect to memory cell arrays contained, in the channels CHB.

However, among the command/address signals CAA and CAB, some of thesignals such as chip select signals are individually supplied to one,two, or more of the semiconductor devices 10.

Read data DQA read from the channels CHA of the semiconductor devices 10is output via data terminals 23A. The data terminals 23A are connectedto a data bus 5A, thereby transferring the read data DQA, which has beenread from the channels CHA, to the controller 2. Reversely, write dataDQA to be written to the channels CHA is input from the controller 2 viaa data bus 5A.

The read data DQB read from the channels CHB of the semiconductordevices 10 is output via data terminals 23B. The data terminals 23B areconnected to a data bus 5B, thereby transferring the read data DQB,which has been read from the channels CHB, to the controller 2.Reversely, write data DQB to be written to the channels CHB is inputfrom the controller 2 to the data terminals 23B via the data bus 5B.

Note that the semiconductor device in the present invention is notrequired to be a semiconductor device which is able to carry out inputof data (write operations), but may be able to carry out only output ofdata (read operations) like a ROM-based semiconductor device.

The semiconductor devices 10 are provided with calibration terminals ZQ.Only the single calibration terminal ZQ is provided on each of thesemiconductor devices 10 and is therefore shared by the channels CHA andCHB. The calibration terminal ZQ is connected to a power-sourcepotential VDD via a reference resistor RZQ provided on a memory modulesubstrate or a motherboard. The reference resistor RZQ is a resistancereferenced in a later-described calibration operation. Note that, in thepresent specification, the resistance value of the reference resistorRZQ is also described as “RZQ” in some cases. The resistance values ofother elements or circuits are also described as “RZQ” as long as theyare the same resistance values as the resistance value of the referenceresistor RZQ.

FIG. 2 is a schematic plan view for explaining a layout of thesemiconductor device 10.

As shown in FIG. 2, the semiconductor device 10 is integrated on asubstrate 6, which has a rectangular planar shape, and the channels CHAand CHB are disposed by using a boundary line L, which divides thesubstrate 6 in a Y-direction, as a boundary. The substrate 6 has a firstperipheral region PEA provided along an edge EG1 in a first side in theY-direction, a second peripheral region PEB provided along an edge EG2in a second side in the Y-direction, and memory cell array regions ARYprovided so as to be sandwiched therebetween.

The external terminals and peripheral circuits belonging to the channelCHA are disposed in the first peripheral region PEA, and the externalterminals and peripheral circuits belonging to the channel CHB aredisposed in the second peripheral region PEB. The memory cell arrayscontained in the channels CHA and CHB are disposed in the memory cellarray regions ARY.

The external terminals belonging to the channel CHA include thecommand/address terminals 21A, the clock terminals 22A, and the dataterminals 23A described above, and these are arranged in a pad queue PAextending in an X-direction. Similarly, the external terminals belongingto the channel CHB include the command/address terminals 21B, the clockterminals 22B, and the data terminals 23B described above, and these arearranged in a pad queue PB extending in the X-direction.

Furthermore, the pad queue PA provided in the first peripheral regionPEA includes the calibration terminal ZQ. The calibration terminal ZQ isshared by the channels CHA and CHB. On the other hand, the pad queue PBprovided in the second peripheral region PEB includes a reset terminal26B. The reset terminal 26B is a terminal to which a reset signal RESETis input from the controller 2 and is shared by the channels CHA andCHB.

FIG. 3 is a schematic plan view for explaining a layout of a calibrationcircuit.

As shown in FIG. 3, the calibration circuit includes a code generator100, an arbiter 200, and two relay circuits 300A and 300B. Among them,the code generator 100, the arbiter 200, and the relay circuit 300A aredisposed in the first peripheral region PEA, and the relay circuit 300Bis disposed in the second peripheral region PEB.

The code generator 100 is a circuit which generates an adjustment codeOUTCODE by referencing the voltage of the calibration terminal ZQ, andthe operation thereof is controlled by the arbiter 200. The arbiter 200receives a calibration execution signal ZQEXEA and a code update signalZQLATA supplied from a command decoder 33A, receives a calibrationexecution signal ZQEXEB and a code update signal ZQLATB supplied from acommand decoder 33B, and controls the operation of the code generator100 based on them. Details of the code generator 100 and the arbiter 200will be described later.

The adjustment code OUTCODE generated by the code generator 100 istransferred to and retained by relay circuits 300A and 300B. Then, theadjustment codes CODE retained by the relay circuits 300A and 300B aresupplied to data output circuits 41A and 41B, respectively, therebyadjusting the output impedance of the data output circuits 41A and 41B.

Herein, one of the reason why the adjustment code OUTCODE output fromthe code generator 100 is supplied via the relay circuits 300A and 300Binstead of directly supplying the adjustment code OUTCODE to the dataoutput circuits 41A and 41B is that the distance between the codegenerator 100 and the data output circuit 41B is long. Morespecifically, while the code generator 100 is disposed in the firstperipheral region PEA, which is close to the edge EG1 of the substrate6, the data output circuit 41B is disposed in the second peripheralregion PEB, which is close to the edge EG2 of the substrate 6;therefore, the line length of the line connecting them becomes along-distance line having a length close to the length of the substrate6 in the Y-direction. Therefore, if the code generator 100 and the dataoutput circuit 41B are directly connected to each other, every time thevalue of the adjustment code OUTCODE (later-described CALCODE) ischanged during a calibration operation, the long-distance line ischarged/discharged; and, therefore, consumed current is increased. Inorder to prevent this, the present embodiment is configured to transferthe value-determined adjustment code OUTCODE (CALCODE) from the codegenerator 100 to the relay circuits 300A and 300B after the calibrationoperation is completed and adjust the output impedance of the dataoutput circuits 41A and 41B based on the adjustment codes CODE retainedin the relay circuits 300A and 300B.

FIG. 4 is a block diagram showing a configuration of the channel CHA.

As shown in FIG. 4, the channel CHA has a memory cell array 11A. Thememory cell array 11A is provided with a plurality of word lines WL anda plurality of bit lines BL and /BL and has a configuration in whichmemory cells MC are disposed at intersection points thereof. Selectionof the word lines WL is carried out by a row decoder 12A, and selectionof the bit lines BL and /BL is carried out by a column decoder 13A.

The bit lines BL and /BL forming pairs are connected to a senseamplifier SAMP provided in the memory cell array 11A. The senseamplifier SAMP amplifies the voltage difference generated between thebit lines BL and /BL and supplies the read data, which has been obtainedas a result thereof, to complementary IO lines LIOT/LIOB. The read datasupplied to the local IO lines LIOT/LIOB is transferred to complementarymain IO lines MIOT/MIOB via a switch circuit TG. Then, the read data onthe main IO lines MIOT/MIOB is converted to single-ended signals by adata control circuit 39A and is supplied to a data input/output circuit40A via a read/write bus RWBS. The data input/output circuit 40Aincludes the data output circuit 41A and a data input circuit 42A.

The channel CHA is provided with the command/address terminals 21A, theclock terminals 22A, the data terminals 23A, voltage terminals 24A and25A, and the calibration terminal ZQ as the external terminals.

The command/address signals CAA are input from outside to thecommand/address terminals 21A. The command/address signals CAA input tothe command/address terminals 21A are supplied to a command/addressinput circuit 31A. The command/address signals CAA include addresssignals ADD and command signals COM. Among them, the address signals ADDare supplied to an address control circuit 32A, and the command signalsCOM are supplied to the command decoder 33A. Circuit blocks such as thecommand/address input circuit 31A, the address control circuit 32A, thecommand decoder 33A, the row decoder 12A, and the column decoder 13Awhich access the memory cell array 11A constitute a firstcommand/address control circuit CA1.

Among the address signals ADD, the address control circuit 32A suppliesrow addresses XADD thereof to the row decoder 12A and supplies columnaddresses YADD thereof to the column decoder 13A. If there is an entryin a mode register set, a mode signal MADD is supplied to a moderegister 14A.

The mode register 14A is a circuit in which a parameter representing anoperation mode of the channel CHA is set. The mode signals output fromthe mode register 14A include an output-level select signal MRSVA. Theoutput-level select signal MRSVA is supplied to the data input/outputcircuit 40A. The output-level select signal MRSVA is a signal forselecting the output level of the read data DQA.

The command decoder 33A is a circuit which generates various internalcommands by decoding the command signals COM. Examples of the internalcommands include active signals ACT, read signals READ, write signalsWRITE, mode-register-set signals MRS, the calibration execution signalsZQEXEA, the code update signals ZQLATA, and reset signals RSTA.

The active signal ACT is a signal which is activated if the commandsignal COM is representing row access (active command). When the activesignal ACT is activated, the row address XADD latched in the addresscontrol circuit 32A is supplied to the row decoder 12A. As a result, theword line WL specified by the row address XADD is selected.

The read signal READ and the write signal WRITE are the signals whichare activated if the command signals COM are representing a read commandand a write command. When the read signal READ or the write signal WRITEis activated, the column address YADD latched in the address controlcircuit 32A is supplied to the column decoder 13A. As a result, the bitline BL or /BL specified by the column address YADD is selected.

Therefore, if an active command and a read command are input, and therow address XADD and the column address YADD are input insynchronization with them; as a result, the read data DQA is read fromthe memory cell MC specified by the row address XADD and the columnaddress YADD. The read data DQA is output from the data terminal 23A tooutside via the data control circuit 39A and the data output circuit41A, which is contained in the data input/output circuit 40A.

On the other hand, if an active command and a write command are input,the row address XADD and the column address YADD are input insynchronization with them, and, then, the write data DQA is input to thedata terminal 23A; as a result, the write data DQA is supplied to thememory cell array 11A via the data input circuit 42A, which is containedin the data input/output circuit 40A, and the data control circuit 39Aand is written to the memory cell MC, which is specified by the rowaddress XADD and the column address YADD.

The mode-register-set signal MRS is a signal which is activated if thecommand signal COM is representing a mode-register-set command.Therefore, if the mode-register-set command is input, and the modesignal MADD is input from the command/address terminal 21A insynchronization with that; as a result, the set value of the moderegister 14A can be rewritten.

The calibration execution signal ZQEXEA is a signal which is activatedif the command signal COM is representing a calibration command. Whenthe calibration execution signal ZQEXEA is activated, the code generator100 executes a calibration operation, thereby generating the adjustmentcode OUTCODE. The adjustment code OUTCODE generated by the codegenerator 100 is transferred to the relay circuits 300A and 300B afterthe calibration operation is terminated.

The code update signal ZQLATA is a signal which is activated if thecommand signal COM is representing a code update command. When the codeupdate signal ZQLATA is activated, an adjustment code CODE retained bythe relay circuit 300A is supplied to the data input/output circuit 40A.As a result, the output impedance of the data output circuit 41A, whichis contained in the data input/output circuit 40A, is changed inaccordance with the adjustment code CODE.

The reset signal RSTA is a signal which is activated if the commandsignal COM is representing a reset command. The reset signal RSTA isinput to a reset control circuit 38A. Based on various reset requests inthe semiconductor device 10, the reset control circuit 38A controls thestates of the corresponding circuit blocks. Examples of the resetrequests include reset signals RSTB and RESET, which are supplied fromthe channel CHB, and power-on reset signals PON, in addition to theabove described reset signals RSTA. The output-level select signal MRSVAis also input to the reset control circuit 38A.

The external clock signals CKA and /CKA are input to the clock terminals22A. The external clock signal CKA and the external clock signal /CKAare mutually complementary signals, and both of them are supplied to aclock input circuit 34A. The clock input circuit 34A receives theexternal clock signals CKA and /CKA and generates an internal clocksignal ICLKA. The internal clock signal ICLKA is used as a timing signalwhich defines the operation timing of the circuit blocks contained inthe channel CHA such as the address control circuit 32A and the commanddecoder 33A.

The internal clock signal ICLKA is also supplied to an internal clockgenerator 35A, and, as a result, a phase-controlled internal clocksignal LCLKA is generated. A DLL circuit can be used as the internalclock generator 35A, but it is not particularly limited thereto. Theinternal clock signal LCLKA is supplied to the data input/output circuit40A and is used as a timing signal for determining output timing of theread data DQA.

The voltage terminals 24A and 25A are the terminals to whichpower-source potentials VDDA and VSSA are supplied. The power-sourcepotentials VDDA and VSSA supplied to the voltage terminals 24A and 25Aare supplied to an internal voltage generator 36A. The internal voltagegenerator 36A generates various internal potentials VPP, VOD, VARY, andVPERI and reference potentials ZQVREF and VOH based on the power-sourcepotentials VDDA and VSSA. The internal potential VPP is a potentialwhich is mainly used in the row decoder 12A, the internal potentials VODand VARY are potentials, which are used in the sense amplifier SAMP, andthe internal potential VPERI is a potential which is used in many othercircuit blocks. On the other hand, the reference potentials ZQVREF andVOH are reference potentials which are used in the code generator 100.

The voltage terminals 24A and 25A are also connected to the power-ondetector 37A. The power-on detector 37A is a circuit which detects thatpower is turned on for the voltage terminals 24A and 25A and, whenpower-on is detected, activates the power-on reset signal PON. Thepower-on reset signal PON is supplied to the circuit blocks of thechannels CHA and CHB and resets the circuits thereof.

The calibration terminal ZQ is connected to the code generator 100. Whenactivated by a calibration-state signal ZQACT, the code generator 100references the impedance of the reference resistor RZQ and the referencepotentials ZQVREF and VOH and carries out a calibration operation. Theadjustment code OUTCODE obtained by the calibration operation issupplied to the data input/output circuit 40A, and, as a result, theoutput impedance of the data output circuit 41A contained in the datainput/output circuit 40A is specified. When the calibration operation isterminated, a calibration end signal CALEND is output from the codegenerator 100.

The calibration control signal ZQACT is generated by a calibrationcontrol signal generation circuit 400. Although details will bedescribed later, the calibration control signal generation circuit 400activates the calibration control signal ZQACT in response to acalibration start signal CMDSB supplied from the arbiter 200 anddeactivates the calibration control signal ZQACT in response to thecalibration end signal CALEND supplied from the code generator 100.

The arbiter 200 receives the calibration execution signal ZQEXEA, thecode update signal ZQLATA, and the calibration execution signal ZQEXEBand the code update signal ZQLATB supplied from the channel CHB andgenerates the calibration start signal CMDSB based on them. Details ofthe arbiter 200 will be described later.

FIG. 5 is a block diagram showing a configuration of the channel CHB.

As shown in FIG. 5, the channel CHB has a circuit configuration similarto that of the channel CHA shown in FIG. 4 except for the point thatsome circuit blocks are added or deleted. The symbols of the circuitblocks shown in FIG. 5 are denoted with “B” at the ends thereof. Thesecircuit blocks correspond to the corresponding circuit blocks denotedwith “A” at the ends thereof among the circuit blocks shown in FIG. 4.The circuit blocks such as a command/address input circuit 31B, anaddress control circuit 32B, the command decoder 33B, a row decoder 12B,and a column decoder 13B which access a memory cell array 11B constitutea second command/address control circuit CA2.

Since the basic functions and connection relations of the circuit blocksconstituting the channel CHB are the same as those of the channel CHAshown in FIG. 4, redundant explanations are omitted, and the partsdifferent from the channel CHA will be focused on and explained.

In a region of the channel CHB, the circuit blocks corresponding to thepower-on detector 37A, the reset control circuit 38A, the code generator100, and the arbiter 200 are not provided. The circuits are provided ina region of the channel CHA and shared with the channel CHB. Instead,the channel CHB is provided with the reset terminal 26B to which thereset signal RESET is input. The reset signal RESET is supplied to thereset control circuit 38A contained in the channel CHA. The adjustmentcode OUTCODE is transferred from the code generator 100 to the relaycircuit 300B.

Power-source potentials VDDB and VSSB are supplied to voltage terminals24B and 25B belonging to the channel CHB, respectively. The power-sourcepotential VDDA and the power-source potential VDDB are the samepotentials and are simply described as VDD when they are notparticularly required to be distinguished from each other. Similarly,the power-source potential VSSA and the power-source potential VSSB arethe same potentials and are simply described as VSS when they are notparticularly required to be distinguished from each other.

FIG. 6 is a drawing for explaining differences in the waveforms of theread data DQA depending on operation modes; wherein, a symbol V30represents the waveform of the read data DQA in a case in which a firstoperation mode is specified, and a symbol V25 represents the waveform ofthe read data DQA in a case in which a second operation mode isspecified.

As shown in FIG. 6, when the read command READ is input via thecommand/address terminal 21A, after a predetermined latency elapses, theread data DQA is subjected to burst output from the data terminal 23A.FIG. 6 shows the read data DQA which is output from any one dataterminal 23A among the plurality of data terminals 23A.

The read data DQA is a binary signal, and, in the example shown in FIG.6, the read data of a low level (L) and a high level (H) is alternatelyoutput. Herein, the specific potential of the low level (L) is VSS, andthe specific potential of the high level (H) is VOH. The level of VOH isthe level of VDD/3 as shown by the symbol V30 if the first operationmode is specified, and is the level of VDD/2.5 as shown by the symbolV25 if the second operation mode is specified. An intermediate potentialbetween VSS serving as the low level (L) and VOH serving as the highlevel (H) is a reference potential VREFDQ. Therefore, the level of thereference potential VREFDQ becomes the level of VDD/6 as shown by thesymbol V30 if the first operation mode is specified and becomes thelevel of VDD/5 as shown by the symbol V25 if the second operation modeis specified. Thus, the amplitude of the read data DQA is different inthe case in which the first operation mode is specified and in the casein which the second operation mode is specified.

The read data of the low level (L) can be actually output by driving thedata terminal 23A at a VSS level. On the other hand, the read data ofthe high level (H) can be actually output by driving the data terminal23A of a semiconductor device 10 a, which carries out a read operation,at a VDD level since a data terminal 7 of the controller 2, whichcarries out a termination operation, is driven at the VSS level as shownin FIG. 7 (A).

Herein, in a case in which the first operation mode is selected, theimpedance of the data output circuit 41A in the semiconductor device 10a, which carries out the read operation, is 2RZQ, and the impedance ofthe data output circuit 8 in the controller 2, which carries out thetermination operation, is RZQ; in this case, the level of the read databecomes VDD/3. On the other hand, in a case in which the secondoperation mode is selected, the impedance of the data output circuit 41Ain the semiconductor device 10 a, which carries out the read operation,is 1.5 RZQ, and the impedance of the data output circuit 8 in thecontroller 2, which carries out the termination operation, is RZQ; inthis case, the level of the read data becomes VDD/2.5.

Similarly, a write operation with respect to the semiconductor device 10a can be carried out by, as shown in FIG. 7 (B), setting the impedanceof the data output circuit 41A in a semiconductor device 10 b, whichcarries out the termination operation, to RZQ, driving the circuit atthe VSS level, setting the impedance of the data output circuit 8 of thecontroller 2 to 2RZQ or 1.5RZQ, and driving the circuit at the VDDlevel. Herein, instead of the semiconductor device 10 b, 10 a per sewhich receives the write operation may carry out the terminationoperation.

The first operation mode is preferred to be selected when an operationfrequency is high (for example, 1.6 GHz). On the other hand, the secondoperation mode is preferred to be selected when the operation frequencyis low (for example, 0.8 GHz). The operation mode is specified by theoutput-level select signal MRSVA, and the operation mode can be changedby rewriting the set value of the mode register 14A.

FIG. 8 is a block diagram showing a configuration of the data outputcircuit 41A contained in the channel CHA and shows the part allocated tothe single data terminal 23A.

As shown in FIG. 8, the data output circuit 41A is provided with sevenpull up units PU0 to PU6 and seven pull down units PD0 to PD6 per thesingle data terminal 23A. Output nodes of the pull up units PU0 to PU6and the pull down units PD0 to PD6 are commonly connected to the dataterminal 23A. The pull up units PU0 to PU6 have mutually same circuitconfigurations and will be simply collectively referred to as “pull upunits PU” if there is no particular need to distinguish them. Similarly,the pull down units PD0 to PD6 have mutually same circuit configurationsand will be simply collectively referred to as “pull down units PD” ifthere is no particular need to distinguish them.

The pull up unit PUi (i=0 to 6) and the pull down unit PDi (i=0 to 6)form a pair. The number of the units to be used is specified by animpedance select signal MODE output from the mode register 14A. Internaldata DATA is supplied from the data control circuit 39A to the pull upunits PU0 to PU6 and the pull down units PD0 to PD6. If the internaldata DATA is indicating a high level, one, two, or more pull up unitsspecified by the impedance select signal MODE is activated among thepull up units PU0 to PU6, and, as a result, the data terminal 23A isdriven to the high level. On the other hand, if the internal data DATAis indicating a low level, one, two, or more pull down units specifiedby the impedance select signal MODE is activated among the pull downunits PD0 to PD6, and, as a result, the data terminal 23A is driven tothe low level.

The impedance of each of the activated pull up units PU0 to PU6 isspecified by a pull up code CODEPU which is part of the adjustment codeCODE. Similarly, the impedance of each of the activated pull down unitsPD0 to PD6 is specified by a pull down code CODEPD which is part of theadjustment code CODE.

In the present embodiment, an impedance target value of the pull upunits PU0 to PU6 is, for example, 2RZQ, and an impedance target value ofthe pull down units PD0 to PD6 is, for example, RZQ. In this case, ifthe units of j pairs are used according to the impedance select signalMODE, the impedance in the case of high-level output becomes 2RZQ/j, andthe impedance in the case of low-level output becomes RZQ/j.

The data output circuit 41B contained in the channel CHB also has acircuit configuration similar to that of the data output circuit 41Ashown in FIG. 8. Therefore, redundant explanations are omitted.

FIG. 9 is a circuit diagram of the pull up unit PU.

As shown in FIG. 9, the pull up unit PU is formed by a transistorportion TRU, which consists of parallely-connected five N-channel-typeMOS transistors TNU0 to TNU4, and a high resistance line RW. Drains ofthe transistors TNU0 to TNU4 are commonly connected to a voltage lineVL, which supplies the power-source potential VDD, and sources of thetransistors TNU0 to TNU4 are connected to the data terminal 23A via thehigh resistance line RW. The high resistance line RW is, for example, aresistance of about 40Ω consisting of, for example, a tungsten line.

Bits DCODEPU0 to DCODEPU4 constituting code signals DCODEPU are input togate electrodes of the transistors TNU0 to TNU4, respectively. As aresult, the five transistors TNU0 to TNU4 are individually subjected toon/off control based on the values of the code signals DCODEPU. As shownin FIG. 9, the code signals DCODEPU are signals which are obtained bysubjecting the bits of code signals CODEPU and the internal data DATA tologic synthesis by AND gate circuits. As a result, if the internal dataDATA is indicating the low level, all of the bits DCODEPU0 to DCODEPU4constituting the code signals DCODEPU become the low level regardless ofthe values of the code signals CODEPU; therefore, all of the transistorsTNU0 to TNU4 are turned off. On the other hand, if the internal dataDATA is indicating the high level, the values of the code signals CODEPUare used as the values of the code control signals DCODEPU with nochange, and some of the transistors TNU0 to TNU4 are turned on.

Herein, the ratio (W/L ratio) of the channel width (W) and the channellength (L) of the transistors TNU0 to TNU4, in other words, currentsupply capacity is weighted by power-of-two. Specifically, if the W/Lratio of the transistor TNU0 is 1WLnu, the W/L ratio of the transistorTNUk (k=0 to 4) is designed to 2^(k)×WLnu. By virtue of this, theimpedance of the pull up unit PU can be adjusted in 32 levels at most.

FIG. 10 is a circuit diagram of the pull down unit PD.

As shown in FIG. 10, the pull down unit PD is formed by a transistorportion TRD, which consists of parallely-connected five N-channel-typeMOS transistors TND0 to TND4, and a high resistance line RW. Sources ofthe transistors TND0 to TND4 are commonly connected to a voltage lineSL, which supplies a ground potential VSSQ, and drains of thetransistors TND0 to TND4 are connected to the data terminal 23A via thehigh resistance line RW.

Bits DCODEPD0 to DCODEPD4 constituting code signals DCODEPD are suppliedto gate electrodes of the transistors TND0 to TND4, respectively. As aresult, the five transistors TND0 to TND4 are individually subjected toon/off control based on the values of the code signals DCODEPD. As shownin FIG. 10, the code signals DCODEPD are signals obtained by subjectingthe bits of the code signals CODEPD and an inverted signal of theinternal data DATA to logic synthesis by AND gate circuits. As a result,if the internal data DATA is indicating the high level, all of the bitsDCODEPD0 to DCODEPD4 constituting the code signals DCODEPD become thelow level regardless of the values of the code signals CODEPD;therefore, all of the transistors TND0 to TND4 are turned off. On theother hand, if the internal data DATA is indicating the low level, thevalues of the code signals CODEPD become the values of the code signalsDCODEPD with no change, and some of the transistors TND0 to TND4 areturned on.

Herein, the ratio (W/L ratio) of the channel width (W) and the channellength (L) of the transistors TND0 to TND4, in other words, currentsupply capacity is weighted by power-of-two. Specifically, if the W/Lratio of the transistor TND0 is 1WLnd, the W/L ratio of the transistorTNDk (k=0 to 4) is designed to 2^(k)×WLnd. By virtue of this, theimpedance of the pull down unit PD can be adjusted in 32 levels.

In this manner, the impedance of each of the pull up unit PU and thepull down unit PD can be adjusted by the code signals CODEPU or CODEPD.The code signals CODEPU and CODEPD are generated by the calibrationoperations by the code generator 100 shown in FIG. 3 and FIG. 4.

FIG. 11 is a block diagram extracting and showing the circuit blocksrelated to the calibration operation.

As shown in FIG. 11, the code generator 100 is provided with acalibration circuit 110, code registers 121 and 122, and a multiplexer130. The calibration circuit 110 is a circuit which generates theadjustment code CALCODE by actually carrying out the calibrationoperation. The code register 121 is a register which sets a default codeDEFCODE1 serving as an initial value of the adjustment code CALCODE ofthe case in which the first operation mode is selected. The coderegister 122 is a register which sets a default code DEFCODE2 serving asan initial value of the adjustment code CALCODE of the case in which thesecond operation mode is selected.

The adjustment codes CALCODE, DEFCODE1, and DEFCODE2 output from thecalibration circuit 110 and the code registers 121 and 122 are input tothe multiplexer 130. Based on the calibration start signal CMDSB and theoutput-level select signal MRSVA, the multiplexer 130 outputs any of theadjustment codes CALCODE, DEFCODE1, and DEFCODE2 to the relay circuits300A and 300B.

As shown in FIG. 11, a reset signal group ZQRST is supplied from thereset control circuit 38A to the code generator 100 and the relaycircuits 300A and 300B. The reset signal group ZQRST is a signal groupindicating reset states corresponding to reset requests. The resetrequests include reset requests according to the reset signals RSTA,RSTB, and RESET, a reset request according to the power-on reset signalPON, and a reset request according to switching of the output-levelselect signal MRSVA. Then, the reset control circuit 38A activatespredetermined reset signals, which constitute the reset signal groupZQRST, in accordance with these reset requests. The reset signal groupZQRST is also input to the arbiter 200 and the calibration controlsignal generation circuit 400.

FIG. 12 is a table for explaining the relation between the types of thereset requests and the circuit blocks serving as reset objects in thecalibration circuit.

First, if reset is requested by the power-on reset signal PON or thereset signal RESET, all of the circuit blocks constituting thecalibration circuit are reset. In this case, in the relay circuit 300A,the contents of a default register 303A are overwritten to inputregisters 301A and 302A and an output register 304A. Similarly, in therelay circuit 300B, the contents of a default register 303B areoverwritten to input registers 301B and 302B and an output register304B.

On the other hand, if reset is requested by switching of theoutput-level select signal MRSVA, the arbiter 200, the calibrationcircuit 110, and part of the relay circuits 300A and 300B are reset. Inthis case, the remaining circuit blocks such as the code registers 121and 122 are not reset.

If reset is requested by the reset signal RSTA, the code generator 100and the arbiter 200 are not reset, and only part of the circuit blockscontained in the relay circuit 300A is reset. Similarly, if reset isrequested by the reset signal RSTB, the code generator 100 and thearbiter 200 are not reset, and only part of the circuit blocks containedin the relay circuit 300B is reset. Details of the relay circuits 300Aand 300B will be described later.

FIG. 13 is a circuit diagram of the arbiter 200.

As shown in FIG. 13, the arbiter 200 is provided with a Set-Reset latchcircuit 201, which is allocated to the channel CHA, and a Set-Resetlatch circuit 202, which is allocated to the channel CHB. The Set-Resetlatch circuit 201 is set by the calibration execution signal ZQEXEA andis reset by the code update signal ZQLATA. Similarly, the Set-Resetlatch circuit 202 is set by the calibration execution signal ZQEXEB andis reset by the code update signal ZQLATB.

A signal A1 output from the Set-Reset latch circuit 201 is input to alevel hold circuit 203. The level hold circuit 203 plays a role tomaintain a signal A2 at the low level during a period until thecalibration end signal CALEND is activated to the high level after theSet-Reset latch circuit 201 is set. Therefore, even if the Set-Resetlatch circuit 201 is reset during the above described period, the signalA2 is maintained at the low level until the calibration end signalCALEND is activated to the high level.

A signal B1 output from the Set-Reset latch circuit 202 is input to alevel hold circuit 204. The level hold circuit 204 plays a role tomaintain a signal B2 at the low level during a period until thecalibration end signal CALEND is activated to the high level after theSet-Reset latch circuit 202 is set. Therefore, even if the Set-Resetlatch circuit 202 is reset during the above described period, the signalB2 is maintained at the low level until the calibration end signalCALEND is activated to the high level.

The signals A2 and B2 are supplied to a promotion circuit 210. Thepromotion circuit 210 is provided with: an inverter 211, which receivesthe signal A2; an inverter 212, which receives output of the inverter211 and generates a signal GETA; a NOR circuit 213, which receives thesignal B2 and the output signal of the inverter 211; and an inverter214, which receives output of the NOR circuit 213 and generates a signalGETB.

By virtue of such a configuration, if the signal A2 is activated to thelow level, the signal GETA is activated to the low level; and, if thesignal B2 is activated to the low level, the signal GETB is activated tothe low level. However, in a case in which the signal A2 is already atthe low level, even if the signal B2 is changed to the low level, thesignal GETB is not activated. On the other hand, the opposite does notcome into effect, even in a case in which the signal B2 is already atthe low level, if the signal A2 is changed to the low level, the signalGETB is deactivated to the high level, and the signal GETA is activated.In this manner, in the promotion circuit 210, the priority of the signalA2 is higher than that of the signal. B2. Therefore, even if thecalibration execution signals ZQEXEA and ZQEXEB compete with each other,the calibration execution signal ZQEXEA is configured to be prioritized.Herein, these signals GETA and GETB may be configured to be output to anexternal controller. This is for a reason that, when such aconfiguration is employed, the controller can recognize the state of thesemiconductor device 10.

The signals GETA and GETB are input to, a NAND circuit 221. A signal C4output from the NAND circuit 221 is changed to a signal C3 through adelay circuit 222, and is then input to a one shot pulse generator 223.The one shot pulse generator 223 generates the one-shot calibrationstart signal CMDSB in response to a rising edge of the signal C3. Wheneither one of the Set-Reset latch circuits 201 and 202 is set as aresult, the calibration start signal CMDSB is activated.

The signals GETA and GETB output from the promotion circuit 210 are fedback to the Set-Reset latch circuits 201 and 202. In more detailedexplanations, the signal GETA is fed back to the reset side of theSet-Reset latch circuit 201 via an inverter 231 and a NAND circuit 232,is fed back to the set side of the Set-Reset latch circuit 201 via aNAND circuit 233, is fed back to the set side of the Set-Reset latchcircuit 202 via a NAND circuit 234, and is further fed back to the resetside of the Set-Reset latch circuit 202 via an inverter circuit 235 anda NOR circuit 236. Moreover, the signal GETB is fed back to the resetside of the Set-Reset latch circuit 202 via an inverter 237 and a NANDcircuit 238, is fed back to the set side of the Set-Reset latch circuit201 via the NAND circuit 233, and is further fed back to the set side ofthe Set-Reset latch circuit 202 via the NAND circuit 234.

The NAND circuit 233 receives the calibration execution signal ZQEXEAand the signals GETA and GETB and sets the Set-Reset latch circuit 201by an output signal thereof. Therefore, on the condition that both ofthe signals GETA and GETB are deactivated to the high level, theSet-Reset latch circuit 201 is set in response to activation of thecalibration execution signal ZQEXEA, and the signal A1 becomes the highlevel.

The NAND circuit 232 receives the inverted signal of the signal GETA andthe code update signal ZQLATA and resets the Set-Reset latch circuit 201by the output signal thereof. Therefore, on the condition that thesignal GETA is activated to the low level, the Set-Reset latch circuit201 is reset in response to activation of the code update signal ZQLATA,and the signal A1 becomes the low level. However, since part of thereset signal group ZQRST (ZQRST1) is input to the reset side of theSet-Reset latch circuit 201 via an inverter 239, if the reset signalZQRST1 is activated, the Set-Reset latch circuit 201 is forcibly reset.

The NAND circuit 234 receives the calibration execution signal ZQEXEBand the signals GETA and GETB and sets the Set-Reset latch circuit 202by the output signal thereof. Therefore, on the condition that both ofthe signals GETA and GETB are deactivated to the high level, theSet-Reset latch circuit 202 is set in response to activation of thecalibration execution signal ZQEXEB, and the signal B1 becomes the highlevel.

The NAND circuit 236 receives the inverted signal of the signal GETB andcode update signal ZQLATB and resets the Set-Reset latch circuit 202 bythe output signal thereof. Therefore, on the condition that the signalGETB is activated to the low level, the Set-Reset latch circuit 202 isreset in response to activation of the code update signal ZQLATB, andthe signal B1 becomes the low level. However, since the output signal ofthe NOR circuit 236 is input to the reset side of the Set-Reset latchcircuit 202, if the output signal of the NOR circuit 236 becomes the lowlevel, the Set-Reset latch circuit 202 is forcibly reset. Since part ofthe reset signal group ZQRST (ZQRST1) and the inverted signal of thesignal GETA are input to the NOR circuit 236, if the reset signal ZQRST1or the signal GETA is activated, the Set-Reset latch circuit 202 isforcibly reset.

On the other hand, even if the signal GETB is activated, the Set-Resetcircuit 201 is not reset in response to that. This is for a reason thatthe reset side of the Set-Reset latch circuit 201 is not provided with acircuit corresponding to the NOR circuit 236.

By virtue of such a configuration, when the signal GETA is activated,the Set-Reset latch circuit 202 is forcibly reset; on the other hand,even when the signal GETB is activated, the Set-Reset latch circuit 201is not reset. As a result, even when the calibration execution signalsZQEXEA and ZQEXEB compete with each other, the calibration execution,signal ZQEXEA is configured to be prioritized.

FIG. 14 is a first operation waveform diagram for explaining theoperations of the arbiter 200.

In the example shown in FIG. 14, the calibration execution signal ZQEXEAis activated at time t11. When the calibration execution signal ZQEXEAis activated, the Set-Reset latch circuit 201 contained in the arbiter200 is set, and, therefore, the signal A1 becomes the high level. As aresult, the signal A2 is changed to the low level, and the signal GETAis activated to the low level.

When the signal GETA is activated to the low level, the signal C4 isactivated, and, after elapse of a delay because of the delay circuit222, the signal C3 is activated. As a result, a one-shot pulse of thecalibration start signal CMDSB is generated, and the calibrationoperation by the code generator 100 is started. When the calibrationoperation is started, the calibration end signal CALEND is once changedto the low level. The calibration operation requires predetermined timeTcal; and, when the calibration operation is completed, the calibrationend signal CALEND is returned to the high level. When the calibrationend signal CALEND becomes the high level, the value of the adjustmentcode CALCODE is determined.

Then, when the code update signal ZQLATA is activated at time t12, theSet-Reset latch circuit 201 is reset and returns to the state before thetime t11. As described later, when the code update signal ZQLATA isactivated, the adjustment code CODE is supplied to the data outputcircuit 41A of the channel CHA, and, as a result, the output impedanceis updated.

When the calibration execution signal ZQEXEA and the code update signalZQLATA are activated in this order in this manner, the output impedanceof the data output circuit 41A is updated.

FIG. 15 is a second operation waveform diagram for explaining theoperations of the arbiter 200.

In the example shown in FIG. 15, the calibration execution signal ZQEXEBis activated at time t21. When the calibration execution signal ZQEXEBis activated, the Set-Reset latch circuit 202 contained in the arbiter200 is set; therefore, the signal B1 becomes the high level. As aresult, the signal B2 is changed to the low level, and the signal GETBis activated to the low level.

When the signal GETB is activated to the low level, the signal C4 isactivated. Therefore, a one-shot pulse of the calibration start signalCMDSB is generated, and the calibration operation by the code generator100 is started.

Then, when the code update signal ZQLATB is activated at time t22, theSet-Reset latch circuit 202 is reset and returns to the state before thetime t21. As described later, when the code update signal ZQLATB isactivated, the adjustment code CODE is supplied to the data outputcircuit 41B of the channel CHB, and, as a result, the output impedanceis updated.

When the calibration execution signal ZQEXEB and the code update signalZQLATB are activated in this order in this manner, the output impedanceof the data output circuit 41B is updated.

FIG. 16 is a third operation waveform diagram for explaining theoperations of the arbiter 200.

In the example shown in FIG. 16, the calibration execution signalsZQEXEA and ZQEXEB are activated at the same time at time t31. Thecalibration execution signal ZQEXEA is generated by the command decoder33A of the channel CHA, and the calibration execution signal ZQEXEB isgenerated by the command decoder 33B of the channel CHB; therefore,these signals are mutually asynchronous. Therefore, for example, if thephases of the external clock signals CKA and /CKA input to the channelCHA and the external clock signals CKB and /CKB input to the channel CHBare approximately matched with each other, a case in which thecalibration execution signals ZQEXEA and ZQEXEB are activated at thesame time as shown in FIG. 14 is conceivable.

When the calibration execution signals ZQEXEA and ZQEXEB are activated,both of the Set-Reset latch circuits 201 and 202 contained in thearbiter 200 are set; and, therefore, both of the signals A1 and B1become the high level. The signals A2 and B2 are changed to the lowlevel in response to that; however, since the signal A2 is prioritizedby the function of the above described promotion circuit 210, the signalGETA is activated to the low level, while the signal GETB is maintainedat the high level.

Furthermore, when the signal GETA is activated to the low level, theSet-Reset latch circuit 202 is reset via the NOR circuit 236. As aresult, the signal B1 returns to the low level. Therefore, among thecalibration execution signals ZQEXEA and ZQEXEB input at the same time,the calibration execution signal ZQEXEA side is enabled, and thecalibration execution signal ZQEXEB is cancelled.

When the signal GETA is activated to the low level, the signal C4 isactivated. Therefore, a one-shot pulse of the calibration start signalCMDSB is generated, and the calibration operation by the code generator100 is started.

During that period, in the example shown in FIG. 16, the calibrationexecution signals ZQEXEA and ZQEXEB and the code update signals ZQLATBare input. In a case in which the output impedance of the data outputcircuit 41A is to be updated as shown in FIG. 14, the calibrationexecution signal ZQEXEA and the code update signal ZQLATA have to beinput in this order. However, in the example shown in FIG. 16, after thecalibration execution signal ZQEXEA is input and before the code updatesignal ZQLATA is input, illegal calibration execution signals ZQEXEA areinput at time t32 and t34. At the time t32 and t34, the calibrationexecution signals ZQEXEB are also input, and the code update signalZQLATB is also input at time t33.

However, these signals are cancelled as shown by a symbol 240. First,the calibration execution signals ZQEXEA and ZQEXEB input at the timet32 and t34 are cancelled by the NAND circuits 233 and 234 since thesignal GETA is at the low level. The code update signal ZQLATB input atthe time t33 is cancelled by the NAND circuit 238 since the signal GETBis at the high level.

Then, when the code update signal ZQLATA is activated at time t35, theSet-Reset latch circuit 201 is reset, and the state returns to the statebefore the time t31. In the example shown in FIG. 16, the code updatesignal ZQLATB is also activated at the same time at the time t35.However, the code update signal ZQLATB input at the time t35 is alsocancelled by the NAND circuit 238 since the signal GETB is at the highlevel.

Even in the case in which the calibration execution signals ZQEXEA andZQEXEB compete with each other like this case or in the case in whichthe illegal calibration execution signals ZQEXEA and ZQEXEB or codeupdate signals ZQLATA and ZQLATB are input, arbitration of these signalsis carried out by the arbiter 200. In the example shown in FIG. 16, onlythe calibration execution signal ZQEXEA input at the time t31 and thecode update signal ZQLATA input at the time t35 are enabled, and, as aresult, the output impedance of the data output circuit 41A is updated.

Even in the case in which the code update signals ZQLATA and ZQLATB arecancelled in the arbiter 200, code update commands per se which are theorigins of the code update signals ZQLATA and ZQLATB are not cancelled.Therefore, even in the case in which the code update signal ZQLATA iscancelled in the arbiter 200, the code update signal ZQLATA is enabledin the relay circuit 300A, and a later-described latch operation iscarried out. Similarly, even in the case in which the code update signalZQLATB is cancelled in the arbiter 200, the code update signal ZQLATB isenabled in the relay circuit 300B, and a later-described latch operationis carried out.

FIG. 17 is a fourth operation waveform diagram for explaining theoperations of the arbiter 200.

In the example shown in FIG. 17, immediately after the calibrationexecution signal ZQEXEB is activated at time t41, the calibrationexecution signal ZQEXEA is activated at time t42. Since the calibrationexecution signals ZQEXEA and ZQEXEB are asynchronously generated by thechannels CHA and CHB, such an input pattern is also conceivable.

In this case, the Set-Reset latch circuit 202 is set in response to thecalibration execution signal ZQEXEB, the signal B1 becomes the highlevel, then, the Set-Reset latch circuit 201 is set in response to thecalibration execution signal ZQEXEA, and the signal A1 becomes the highlevel. As a result, the signals GETB and GETA are activated in thisorder. Then, the signal C4 is activated in response to the signal GETB,which has been activated first. Therefore, a one-shot pulse of thecalibration start signal CMDSB is generated, and the calibrationoperation by the code generator 100 is started.

On the other hand, when the signal GETA is activated to the low level,the output signal of the NOR circuit 236 becomes the low level.Therefore, the Set-Reset latch circuit 202 is forcibly reset. As aresult, the calibration execution signal ZQEXEB is substantiallycancelled, and only the calibration execution signal ZQEXEA is enabled.

In this manner, not only in the case in which the calibration executionsignals ZQEXEA and ZQEXEB are input at the same time, but also in thecase in which these signals are input with a short time lag, thecalibration execution signal ZQEXEA corresponding to the channel CHA isprioritized. However, if the calibration execution signal ZQEXEA isinput with a certain time lag or more after the calibration executionsignal ZQEXEB is input, since the output signal of the NAND circuit 233is fixed by the signal GETB, the calibration execution signal ZQEXEA iscancelled.

FIG. 18 is a circuit diagram of a promotion circuit 250 according to amodification example.

The promotion circuit 250 shown in FIG. 18 is a Set-Reset latch circuitof a type which is set by the signal A2 and is reset by the signal B2.Output signals y and z correspond to the above described signals GETAand GETB.

The promotion circuit 250 is provided with: an inverter 251, whichinverts the signal A2; an inverter 252, which inverts the signal B2; aNAND circuit 253, which receives the inverted signal A2 and the signalZ; and a NAND circuit 254, which receives the inverted signal B2 and thesignal y. The output signal of the NAND circuit 253 is output as thesignal y via inverters 255 and 256. On the other hand, the output signalof the NAND circuit 254 and the output signal of the inverter 255 areinput to a NOR circuit 257. The output signal of the NOR circuit 257 isoutput as the signal z via an inverter 258.

By virtue of such a configuration, when the signal A2 is changed to thelow level, the signal y is changed to the low level, and the outputsignal of the NAND circuit 254 is fixed; therefore, even if the signalB2 is changed to the low level thereafter, the signal Z maintains thehigh level. Similarly, when the signal B2 is changed to the low level,the signal z is changed to the low level, and the output signal of theNAND circuit 253 is fixed; therefore, even if the signal A2 is changedto the low level thereafter, the signal y maintains the high level.

However, in a case in which the time lag between the changes of thesignals A2 and B2 to the low level is extremely short, specifically, ina case in which both of them are changed to the high level with a timelag of less than the feed-back time of the signals y and z, the signalA2 is prioritized. For example, the signal B2 becomes the low levelfirst, and, then, the signal A2 is changed to the low level before thesignal z is fed back to the NAND circuit 253; in this case, the signal zis cancelled by the NOR circuit 257, and the signal A2 is effectivelyreceived. As a result, instead of the signal z, the signal y becomes thelow level.

Such an operation does not occur if the input order of the signals A2and B2 is the opposite. More specifically, the signal y changed to thelow level is not cancelled even if the signal A2 becomes the low levelfirst, and, then, the signal B2 is changed to the low level before thesignal y is fed back to the NAND circuit 254. In other words, as well asthe promotion circuit 210, the priority of the signal A2 is higher thanthat of the signal B2.

The promotion circuit 250 shown in FIG. 18 can be used not only insteadof the promotion circuit 210 shown in FIG. 13, but can be also usedinstead of the entire arbiter 200. For example, if the calibrationexecution signals ZQEXEA and ZQEXEB are so-called level signals, both ofthem can be subjected to arbitration by the promotion circuit 250 shownin FIG. 18.

FIG. 19 is a circuit diagram of a general Set-Reset latch circuit 260.

The Set-Reset latch circuit 260 shown in FIG. 19 is formed by inverters261 and 262, which invert input signals IN1 and IN2, and NAND circuits263 and 264, which receive the output signals of the inverters 261 and262 and are recurrently connected. In the Set-Reset latch circuit 260like this, the input signals IN1 and IN2 do not have the order ofpriorities. Therefore, if the input signals IN1 and IN2 are changed witha short time lag therebetween, a metastable state is temporarilyobtained.

FIG. 20 is a waveform diagram for explaining the operations of theSet-Reset latch circuit 260.

In FIG. 20, the input signal IN1 is changed from the high level to thelow level at predetermined timing, and the timing of changing the inputsignal IN2 from the high level to the low level is changed with respectto the input signal IN1. FIG. 20 also shows the levels of nodes n1 to n4shown in FIG. 19. An output signal OUT is a signal obtained by bufferingthe level of the node n4 by a buffer 265.

As shown in FIG. 20, depending on the change timing of the input signalIN2, the levels of the nodes n3 and n4 are not normally changed, and itcan be understood that a so-called metastable state is obtained.Therefore, depending on the change timing of the input signal IN2, thetiming at which the output signal OUT is changed is significantlydelayed.

FIG. 21 is a waveform diagram for explaining the operations of thepromotion circuit 250.

Also in FIG. 21, the signal A2 is changed from the high level to the lowlevel at predetermined timing, and the timing of changing the signal B2from the high level to the low level is changed with respect to thesignal A2. FIG. 21 also shows the levels of nodes n11 to n16 shown inFIG. 18. The output signal OUT is a signal obtained by buffering theoutput signal z by a buffer 259.

As shown in FIG. 21, it can be understood that, depending on the changetiming of the signal B2, the levels of the nodes are not normallychanged, and the so-called metastable state is almost obtained, but themetastable state is eliminated in a short period of time. Therefore, thetiming at which the output signal OUT is changed is not delayed.

FIG. 22 is a circuit diagram of the calibration control signalgeneration circuit 400.

As shown in FIG. 22, the calibration control signal generation circuit400 is provided with a Set-Reset latch circuit 401. The calibrationstart signal CMDSB is input to the set side of the Set-Reset latchcircuit 401, and the calibration end signal CALEND is input to the resetside thereof via a one shot pulse generator 402. According to such aconfiguration, as shown in FIG. 23, after the one-shot calibration startsignal CMDSB is activated, during the period until the calibration endsignal CALEND is changed to the high level, the calibration controlsignal ZQACT becomes the high level. The calibration control signalZQACT is used as a state signal which indicates that the calibrationcircuit 110 is carrying out the calibration operation.

Part of the reset signal group ZQRST (ZWRST1) is also input to the resetside of the Set-Reset latch circuit 401 via an inverter 403. Therefore,if the reset signal group ZQRST1 is activated, the Set-Reset latchcircuit 401 is forcibly reset, and the calibration control signal ZQACTbecomes the low level.

FIG. 24 is a block diagram of the calibration circuit 110.

As shown in FIG. 24, the calibration circuit 110 is provided with a pullup unit PUR, which is a replica of the pull up unit PU, and pull downunits PDR0 to PDR5, which are replicas of the pull down units PD. Thepull up unit PUR has substantially the same circuit configuration asthat of the pull up unit PU, and the impedance thereof is controlled bythe code signal CODEPU. Similarly, all of the pull down units PDR0 toPDR5 have substantially the same circuit configurations as those of thepull down units PD, and the impedance thereof is controlled by the codesignals CODEPD.

As shown in FIG. 24, output nodes of the pull down units PDR1 to PUR5are commonly connected to the calibration terminal ZQ and are connectedto a comparator COMPD. In response to activation of the calibrationcontrol signal ZQACT, the comparator COMPD compares the potential of thecalibration terminal ZQ and the reference potential VREFDQ and, based onthe result thereof, generates an up/down signal UDD. The up/down signalUDD is supplied to a counter CNTD, and, based on that, the code signalCODEPD, which is the count value of the counter CNTD, is incremented ordecremented. The increment or decrement of the counter CNTD is carriedout in synchronization with an update signal UPDATED. On the conditionthat the calibration control signal ZQACT is activated, the updatesignal UPDATED is generated by a timing generator TMD in synchronizationwith an oscillator signal OSCCLK. The oscillator signal OSCCLK isgenerated by an oscillator OSC, which is activated by the calibrationcontrol signal ZQACT. The oscillator OSC is deactivated by thecalibration end signal CALEND.

Furthermore, the output nodes of the pull up unit PUR and the pull downunit PDR0 are connected to a connection node A. The connection node A isconnected to a comparator COMPU. In response to activation of thecalibration control signal ZQACT, the comparator COMPU compares thepotential of the connection node A and the reference potential VOH and,based on the result thereof, generates an up/down signal UDU. Theup/down signal UDU is supplied to a counter CNTU, and, based on that,the code signal CODEPU, which is the count value of the counter CNTU, isincremented or decremented. The increment or decrement of the counterCNTU is carried out in synchronization with an update signal UPDATEU. Onthe condition that the calibration control signal ZQACT and a pull-downend signal ENDPD are activated, the update signal UPDATEU is generatedby a timing generator TMU in synchronization with the oscillator signalOSCCLK.

The calibration operation using the calibration circuit 110 is carriedout by the below procedure.

First, when the calibration control signal ZQACT is activated, thecomparator COMPD is activated, and comparison between the potential ofthe calibration terminal ZQ and the reference potential VREFDQ iscarried out. As a result, if the potential of the calibration terminalZQ is lower than the reference potential VREFDQ, the counter CNTD isdecremented by using the up/down signal UDD, and the value of the codesignal CODEPD is reduced. As a result, the impedance of the pull downunits PDR1 to PDR5 is increased; therefore, the potential of thecalibration terminal ZQ is increased. Reversely, if the potential of thecalibration terminal ZQ is higher than the reference potential VREFDQ,the counter CNTD is incremented by using the up/down signal UDD, and thevalue of the code signal CODEPD is increased. As a result, the impedanceof the pull down units PDR1 to PDR5 is reduced; therefore, the potentialof the calibration terminal ZQ is reduced.

When such an operation is executed every time the update signal UPDATEDis activated, the potential of the calibration terminal ZQ becomes thestate that approximately matches the reference potential VREFDQ. Herein,the level of the reference potential VREFDQ is, for example, VDDQ/6, andthe five pull down units PDR1 to PDR5 are parallely connected to thecalibration terminal ZQ; therefore, when the potential of thecalibration terminal ZQ becomes the state that approximately matches thereference potential VREFDQ, all of the pull down units PDR1 to PDR5 arealso adjusted to the same resistance value (RZQ) as that of thereference resistor RZQ. The impedance of the pull down unit PDR0 is alsoadjusted to RZQ.

When the calibration operation of the pull down units PDR1 to PDR5 iscompleted, the pull-down end signal ENDPD is output from the counterCNTD, and, subsequently, the calibration operation of the pull up unitPUR is started.

When the pull-down end signal ENDPD is activated, the comparator COMPUis activated, and comparison between the potential of the connectionnode A and the reference potential VOH is carried out. As a result, ifthe potential of the connection node A is higher than the referencepotential VOH, the counter CNTU is decremented by using the up/downsignal UDU, and the value of the code signal CODEPD is reduced. As aresult, the impedance of the pull up unit PUR is increased; therefore,the potential of the connection node A is reduced. Reversely, if thepotential of the connection node A is lower than the reference potentialVOH, the counter CNTU is incremented by using the up/down signal UDU,and the value of the code signal CODEPU is increased. As a result, theimpedance of the pull up unit PUR is reduced; therefore, the potentialof the connection node A is increased.

When such an operation is executed every time the update signal UPDATEUis activated, the potential of the connection node A becomes the statethat approximately matches the reference potential VOH. Herein, thelevel of the reference potential VOH is, for example, VDDQ/3, and theimpedance of the pull down unit PDR0 has already been adjusted to RZQ;therefore, when the potential of the connection node A becomes the statethat approximately matches the reference potential VOH, the pull up unitPUR is adjusted to the resistance value (2RZQ) that is two times that ofthe reference resistor RZQ.

When the calibration operation of the pull up unit FUR is completed, thecalibration end signal CALEND is output from the counter CNTU, and theoperation of the oscillator OSC is stopped. As a result, the series ofcalibration operations is completed. Then, the code signals CODEPU andCODEPD (adjustment codes CALCODE) generated by the calibrationoperations are supplied to the multiplexer 130 shown in FIG. 11.

FIG. 25 is a circuit diagram of the multiplexer 130.

As shown in FIG. 25, the multiplexer 130 is provided with a selector 131and a latch circuit 132. The selector 131 is provided with three inputnodes 0, 1, and 2 and three select nodes 0, 1, and 2 and outputs thesignal of the input node corresponding to the activated select node. Theadjustment code CALCODE supplied from the calibration circuit 110 isinput to the input node 0. The default codes DEFCODE1 and DEFCODE2supplied from the code registers 121 and 122 shown in FIG. 11 are inputto the input nodes 1 and 2, respectively. The default code DEFCODE1 isthe initial value of the adjustment code CALCODE in the case in whichthe first operation mode is selected. The default code DEFCODE2 is theinitial value of the adjustment code CALCODE in the case in which thesecond operation mode is selected.

An adjustment code ZQVALUEP output from the selector 131 is output viathe latch circuit 132 and transferred to the relay circuits 300A and300B. In FIG. 23, the output signal of the latch circuit 132 isdescribed as the adjustment code OUTCODE.

FIG. 26 is a circuit diagram of the latch circuit 132. As is clear fromthe circuit configuration shown in FIG. 26, if a select node G is at thehigh level, the latch circuit 132 outputs the signal which is input toan input node D to the an output node Q with no change. On the otherhand, if the select node G is at the low level, the input node D and theoutput node Q are disconnected from each other, and the signal which hasbeen input immediately before is output from the output node Q.

As shown in FIG. 25, the inverted signal of the calibration controlsignal ZQACT is input to the select node G. Therefore, during the periodin which the calibration control signal ZQACT is activated to the highlevel, the select node G becomes the low level, and the input node D andthe output node Q are therefore disconnected from each other. As aresult, although the value of the adjustment code CALCODE (in otherwords, the adjustment code ZQVALUEP) is changed from moment to moment insynchronization with the oscillator signal OSCCLK during the calibrationoperation, this is not directly transferred to the relay circuits 300Aand 300B. As described above, since the line connecting the codegenerator 100 and the relay circuit 300B is a long-distance line, thecharge/discharge current thereof is large; however, since the level ofthe long-distance line is not changed during the calibration operation,increase in the consumed current can be prevented.

Then, when the calibration control signal ZQACT is changed to the lowlevel because of termination of the calibration operation, the value ofthe adjustment code ZQVALUEP is reflected to the adjustment code OUTCODEand is transferred to the relay circuits 300A and 300B.

The signals input to the select nodes 0, 1, and 2 of the selector 131are generated by a logic circuit 133. First, if a default select signalDEFCODESEL is deactivated to the low level, a select signal CALCODEG isactivated in response to the calibration control signal ZQACT. As aresult, the adjustment code CALCODE generated by the calibration circuit110 is selected.

On the other hand, if the default select signal DEFCODESEL isdeactivated to the low level, a select signal DEFCODE1G or DEFCODE2G isactivated in response to the output-level select signal MRSVA.Specifically, in a case in which the output-level select signal MRSVA isat the high level and the first operation mode is selected, the selectsignal DEFCODE1G is activated, and, as a result, the default codeDEFCODE1 supplied from the code register 121 is selected. On the otherhand, in a case in which the output-level select signal MRSVA is at thelow level and the second operation mode is selected, the select signalDEFCODE2G is activated, and, as a result, the default code DEFCODE2supplied from the code register 122 is selected.

The default select signal DEFCODESEL is activated when the codegenerator 100 is reset, and the default select signal DEFCODESEL isdeactivated when the calibration operation is started thereafter.Therefore, during the period until the calibration operation is startedafter the code generator 100 is reset, the default code DEFCODE1 orDEFCODE2 is supplied to the relay circuits 300A and 300B.

FIG. 27 is a block diagram showing a configuration of the relay circuit300A.

As shown in FIG. 27, the relay circuit 300A is provided with the inputregisters 301A and 302A, the default register 303A, and the outputregister 304A. The input registers 301A and 302A and the defaultregister 303A latch the adjustment code OUTCODE (CALCODE, DEFCODE1 orDEFCODE2) transferred from the code generator 100. Specifically, in acase in which the output-level select signal MRSVA is at the high leveland the first mode is selected, the adjustment code OUTCODE is latchedby the input register 301A in response to the calibration control signalZQACT. On the other hand, if the output-level select signal MRSVA is atthe low level and the second operation mode is selected, the adjustmentcode OUTCODE is latched by the input register 302A in response to thecalibration control signal ZQACT. If the output-level select signalMRSVA is changed, this change is detected by a detector 306A. In thiscase, the adjustment code OUTCODE is latched by the default register303A in response to the calibration control signal ZQACT.

However, in selection of the registers, in order to adjust the operationtiming, an output-level select signal MRSVAD obtained by delaying theoutput-level select signal MRSVA is used, and a calibration controlsignal ZQACTD obtained by delaying the calibration control signal ZQACTis used.

The adjustment codes OUTCODE latched by the input registers 301A and302A are supplied to the output register 304A via a multiplexer 305A. Ifthe output-level select signal. MRSVAD is indicating the first operationmode, the multiplexer 305A selects the adjustment code OUTCODE outputfrom the input register 301A. If the output-level select signal MRSVADis indicating the second operation mode, the multiplexer 305A selectsthe adjustment code OUTCODE output from the input register 302A.

In response to activation of the code update signal ZQLATA, the outputregister 304A latches the input adjustment code OUTCODE (CALCODE,DEFCODE1 or DEFCODE2). The adjustment code CODE latched by the outputregister 304A is supplied to the data output circuit 41A, and, as aresult, the output impedance of the data output circuit 41A is adjusted.Therefore, after the calibration operation is completed, in response toactivation of the code update signal ZQLATA, the updated adjustment codeCODE is supplied to the data output circuit 41A.

FIG. 28 is a block diagram showing a configuration of the relay circuit300B.

As shown in FIG. 28, the relay circuit 300B is provided with the inputregisters 301B and 302B, the default register 303B, the output register304B, a multiplexer 305B, and a detector 306B. Except that the codeupdate signal ZQLATB is used instead of the code update signal ZQLATA,the operation of the relay circuit 300B is the same as the abovedescribed operation of relay circuit 300A. Therefore, redundantexplanations are omitted.

Therefore, when the code update signal ZQLATB is activated after thecalibration operation is completed, the updated adjustment code CODE issupplied to the data output circuit 41B.

FIG. 29 is a timing chart for explaining the operations of themultiplexer 130 and the relay circuit 300A.

In the example shown in FIG. 29, at time t53, the output-level selectsignal MRSVA is changed from the high level to the low level. Therefore,the first operation mode is specified before the time t53, and thesecond operation mode is specified after the time t53. In the period inwhich the first operation mode is specified, the calibration controlsignal ZQACT is changed to the high level at time t51, and, then, thecalibration control signal ZQACT is changed to the low level at timet52. In the period in which the second operation mode is specified, thecalibration control signal ZQACT is changed to the high level at timet54, and, then, the calibration control signal ZQACT is changed to thelow level at time t55.

When the calibration control signal ZQACT is changed to the high levelat the time t51, after predetermined delay time elapses, the selectsignal CALCODEG becomes the high level. Since the selector 131 selectsthe input node 0 as a result, the adjustment code ZQVALUEP output fromthe selector 131 becomes the adjustment code CALCODE generated by thecalibration circuit 110. However, since the calibration control signalZQACT is at the high level at this point of time, the adjustment codeOUTCODE output from the latch circuit 132 is indicating the default codeDEFCODE1.

In the period in which the calibration control signal ZQACT is at thehigh level, the calibration operation is executed by the calibrationcircuit 110. In the present example, since the first operation mode isselected in this case, the calibration operation is carried out bysetting the level of the reference potential VREFDQ to VDD/6 and settingthe level of the reference potential VOH to VDD/3.

If the delayed calibration control signal ZQACTD is changed to the highlevel, the default registers 303A and 303B carry out latch operations.As a result, in the default register 303A, the default code DEFCODE1 islatched.

Then, when the calibration control signal ZQACT is changed to the lowlevel at the time t52, the adjustment code OUTCODE output from the latchcircuit 132 is switched from the default code DEFCODE1 to the adjustmentcode CALCODE. As a result, the adjustment code CALCODE is transferred tothe relay circuits 300A and 300B. Then, when the delayed calibrationcontrol signal ZQACTD is changed to the low level, the input registers301A and 301B carry out latch operations. As a result, in the inputregisters 301A and 301B, the adjustment code CALCODE is latched.

Then, the select signal DEFCODE1G becomes the high level, and the statereturns to the state before the time t51.

Then, when the output-level select signal MRSVA is changed at the timet53, the select signal DEFCODE2G becomes the high level instead of theselect signal DEFCODE1G. As a result, the adjustment code ZQVALUEPoutput from the selector 131 is changed to the default code DEFCODE2,and this is output as the adjustment code OUTCODE with no change via thelatch circuit 132.

When the delayed output-level select signal MRSVA is changed to the highlevel, the default register 303A contained in the relay circuit 300Acarries out a latch operation. As a result, in the default registers303A and 303B, the default code DEFCODE2 is latched.

Then, when the calibration control signal ZQACT is changed to the highlevel at the time t54, after predetermined delay time elapses, theselect signal CALCODEG becomes the high level. As a result, the selector131 selects the input node 0. Therefore, the adjustment code ZQVALUEPoutput from the selector 131 becomes the adjustment code CALCODE, whichis generated by the calibration circuit 110. However, since thecalibration control signal ZQACT is at the high level at this point oftime, the adjustment code OUTCODE output from the latch circuit 132indicates the default code DEFCODE2.

In the period in which the calibration control signal ZQACT is at thehigh level, the calibration operation is executed by the calibrationcircuit 110. In the present example, since the second operation mode isselected at this point, the calibration operation is carried out whilesetting the level of the reference potential VREFDQ to VDD/5 and settingthe level of the reference, potential VOH to VDD/2.5.

When the delayed calibration control signal ZQACTD is changed to thehigh level, the default register 303A contained in the relay circuit300A carries out the latch operation. As a result, in the defaultregisters 303A and 303B, the default code DEFCODE2 is latched.

Then, when the calibration control signal ZQACT is changed to the lowlevel at the time t55, the adjustment code OUTCODE output from the latchcircuit 132 is switched from the default code DEFCODE2 to the adjustmentcode CALCODE. As a result, the adjustment code CALCODE is transferred tothe relay circuits 300A and 300B. Then, when the delayed calibrationcontrol signal ZQACTD is changed to the low level, the input registers302A and 302B carry out latch operations. As a result, in the inputregisters 302A and 302B, the adjustment code CALCODE is latched.

Then, the select signal DEFCODE2G becomes the high level, and the statereturns to the state before the time t54.

In this manner, in the present embodiment, since the default registers303A and 303B are provided in the relay circuits 300A and 300B, evenimmediately after the code generator 100 is reset, the default codeDEFCODE1 or DEFCODE2 can be immediately supplied to the data outputcircuits 41A and 41B. Moreover, since the input registers 301A and 301Bfor the first operation mode and the input registers 302A and 302B forthe second operation mode are provided in the relay circuits 300A and300B, even when the operation mode is switched, the adjustment codeCALCODE obtained by calibrating in the previous operation mode is saved.

FIG. 30 shows an example of changes of the adjustment codes retained inthe registers.

First, at time t61 in the initial state after power-on, the firstoperation mode is selected. Then, by an initialization operation, thedefault code DEFCODE1 is stored in the code register 121, and thedefault code DEFCODE2 is stored in the code register 122. The defaultcode DEFCODE1 is transferred to all of the other registers contained inthe code generator 100 and the relay circuits 300A and 300B. As aresult, the data output circuits 41A and 41B are set to the outputimpedance specified by the default code DEFCODE1.

Then, when the first operation mode is switched to the second operationmode by issuing the mode-register set command at time t62, the defaultcode DEFCODE2 retained in the code register 122 is transferred to thedefault registers 303A and 303B and is further transferred to the outputregisters 304A and 304B. As a result, the data output circuits 41A and41B are set to the output impedance specified by the default codeDEFCODE2.

Then, when the calibration command is issued at time t63, thecalibration circuit 110 executes the calibration operation and generatesthe adjustment code CALCODE. Then, when the calibration operation iscompleted, the adjustment code CALCODE is transferred to the relaycircuits 300A and 300B and are retained in the input registers 302A and302B. At this point of time, the output impedance of the data outputcircuits 41A and 41B is the output impedance specified by the defaultcode DEFCODE2.

Furthermore, when the code update command is issued at time t64, theadjustment code CALCODE retained in the input registers 302A and 302B istransferred to the output registers 304A and 304B. As a result, the dataoutput circuits 41A and 41B are set to the output impedance specified bythe adjustment code CALCODE obtained by the calibration operation.

Then, when the reset command is issued at time t65, all of the codegenerator 100 is reset and becomes the state which is the same as thatat the time t61 is obtained. On the other hand, the input registers301A, 302A, 301B, and 302B, and the default registers 303A and 303Bcontained in the relay circuits 300A and 300B are not reset, and thedefault code DEFCODE2 retained in the default registers 303A and 303B istransferred to the output registers 304A and 304B. As a result, evenafter reset, the data output circuits 41A and 41B are immediately set tothe output impedance specified by the default code DEFCODE2.

Then, when the second operation mode is switched to the first operationmode by issuing of the mode-register-set command at time t66, thedefault code DEFCODE1 retained in the code register 121 is transferredto the default registers 303A and 303B and is further transferred to theoutput registers 304A and 304B. As a result, the data output circuits41A and 41B are set to the output impedance specified by the defaultcode DEFCODE1.

As explained above, since the semiconductor device 10 according to thepresent embodiment is provided with the arbiter 200, which carries outarbitration of the calibration execution signals ZQEXEA and ZQEXEB,which are mutually asynchronously generated. Therefore, the calibrationoperation can be normally executed even when the calibration executionsignals ZQEXEA and ZQEXEB are generated at any timing.

Moreover, after the value of the adjustment code CALCODE is determinedby the calibration operation, the value-determined adjustment codeCALCODE is transferred to the relay circuits 300A and 300B. Therefore,increase in the consumed current caused by variations in the value ofthe adjustment code CALCODE in the calibration operation can besuppressed.

Furthermore, since the code registers 121 and 122, which store thedefault codes DEFCODE1 and DEFCODE2, are provided in the code generator100, even immediately after reset or immediately after switching of theoperation modes, the default code DEFCODE1 or DEFCODE2 can beimmediately supplied to the data output circuits 41A and 41B.

The code registers 121 and 122 may be disposed in the side of the relaycircuits 300A and 300B. In that case, the default registers 303A and303B may be removed from the relay circuits 300A and 300B, and the coderegisters 121 and 122 may be provided instead of them. An example ofchanges of the adjustment code retained in the registers in this case isshown in FIG. 31.

As shown in FIG. 31, in the present example, when the first operationmode is switched to the second operation mode (time t61), the defaultcode DEFCODE2 is transferred from the code registers 122 in the relaycircuits 300A and 300B to the output registers 304A and 304B. Similarly,when the reset command is issued (time t65), the default code DEFCODE2is transferred from the code registers 122 in the relay circuits 300Aand 300B to the output registers 304A and 304B. Then, when the secondoperation mode is switched to the first operation mode (time t66), thedefault code DEFCODE1 is transferred from the input registers 301A and301B in the relay circuits 300A and 300B to the output registers 304Aand 304B. Other operations are basically the same as the operationsshown in FIG. 30.

FIG. 32 is a circuit diagram showing part of the calibration circuit 110according to a modification example.

FIG. 32 shows only the circuit which is provided between the calibrationterminal ZQ and the pull down units PDR1 to PDR5 in the calibrationcircuit 110 according to the modification example. Since the othercircuit part is the same as that shown in FIG. 24, illustration isomitted.

As shown in FIG. 32, the calibration circuit 110 according to themodification example is provided with a transfer gate 118 between thecalibration terminal ZQ and the pull down units PDR1 to PDR5 and has atransistor 119, which fixes the output nodes of the pull down units PDR1to PDR5 to the power-source potential VDD. Then, when the calibrationcontrol signal ZQA is activated to the high level, the transfer gate 118is turned on; therefore, the calibration operation is enabled. On theother hand, the transfer gate 118 is turned off in the period in whichthe calibration control signal ZQACT is at the low level; therefore, thecalibration terminal ZQ and the pull down units PDR1 to PDR5 aredisconnected, and the output nodes of the pull down units PDR1 to PDR5are fixed to the power-source potential VDD. By virtue of this, evenwhen the reference resistor RZQ is shared by a plurality of chips, onlythe transfer gate 118 of the chip which carries out the calibrationoperation is turned on; therefore, the internal circuit of the chip(s)which does not carry out the calibration operation does not become theload capacity of the calibration terminal ZQ, the load capacity in thecalibration operation, specifically, the load capacity in a comparisonoperation of the comparator CMPD becomes constant, and the stablecalibration operation can be ensured.

FIG. 33 is a block diagram showing a configuration of the relay circuit300A according to a modification example.

The relay circuit 300A according to the modification example isdifferent from the relay circuit 300A shown in FIG. 27 in the point thatthe promotion circuit 250, an OR circuit 307A, a supplemental register308A, and a multiplexer 309A are added as shown in FIG. 33. Since theother configurations are basically the same as those of the relaycircuit 300A shown in FIG. 27, the same elements are denoted by the samesymbols, and redundant explanations are omitted. When the presentmodification example is used, the circuit configuration according toFIG. 32 can be employed also for the relay circuit 300B.

In addition to the function of the relay circuit 300A shown in FIG. 27,the relay circuit 300A according to the modification example has afunction to correctly output the adjustment code CODE even when thedifference between the end timing of the calibration operation and theactivation timing of the code update signal ZQLATA is small.Specifically, it has the function to, when the code update signal ZQLATAis activated immediately before the calibration operation is terminated,output the previous adjustment code CODE instead of the adjustment codeCODE generated by the current calibration operation. On the other hand,if the code update signal ZQLATA is activated after the calibrationoperation is terminated, the adjustment code CODE generated by thecurrent calibration operation is output.

As shown in FIG. 33, the OR circuit 307A receives the delayedcalibration control signal ZQACTD and the code update signal ZQLATA andgenerates a code update signal ZQACTLA. Therefore, if at least one ofthe delayed calibration control signal ZQACTD and the code update signalZQLATA is at the high level, the code update signal ZQACTLA maintainsthe high level. This means that, when the code update signal ZQLATA isactivated immediately before the calibration operation is terminated,the code update signal ZQACTLA maintains the high level. On the otherhand, in a case in which the code update signal ZQLATA is activatedafter the calibration operation is terminated, the code update signalZQACTLA is once changed to the low level. The code update signal ZQACTLAis input to the supplemental register 308A.

The promotion circuit 250 is the circuit shown in FIG. 18. The delayedcalibration control signal ZQACTD and the inverted code update signalZQLATA are input to the promotion circuit 250, and the promotion circuit250 has the circuit configuration which prioritizes the delayedcalibration control signal ZQACTD. As a result, if the decay of thedelayed calibration control signal ZQACTD is faster than the rise of thecode update signal ZQLATA, a select signal LATCMDFASTA is maintained atthe low level; and, if the rise of the code update signal ZQLATA isfaster than the decay of the delayed calibration control signal ZQACTD,the select signal LATCMDFASTA becomes the high level.

Then, since the promotion circuit 250 has the circuit configurationwhich prioritizes the delayed calibration control signal ZQACTD, if thetiming of both of them is overlapped, the select signal LATCMDFASTAbecomes the low level.

The select signal LATCMDFASTA is input to the multiplexer 309A. If theselect signal LATCMDFASTA is at the low level, the multiplexer 309Aselects output of the multiplexer 305A. If the select signal LATCMDFASTAis at the high level, the multiplexer 309A selects output of thesupplemental register 308A. The supplemental register 308A is a circuitwhich outputs the input signal with no change by allowing the signal togo therethrough if the code update signal ZQLATLA is at the low leveland latches the input signal if the code update signal ZQLATLA ischanged to the high level.

By virtue of the above configuration, when the select signal LATCMDFASTAis changed to the high level, the output of the supplemental register308A is selected instead of the output of the multiplexer 305A.Therefore, the previous value can be output with no change as theadjustment code CODE. Thus, the output of the multiplexer 305A is notselected at the timing when the value is changed. Moreover, since themetastable time of the promotion circuit 250 per se is short, safety ofthe circuit operations is improved.

When the information of the signals GETA and GETB of FIG. 13 is outputto outside of the semiconductor device 10, a user of the semiconductordevice 10 can judge the state thereof by using this information, andmore reliable arbitration operations can be carried out. Thus, accordingto this information, the user can distinguish whether the currentcomputation result is according to the instructions by the user oraccording to someone else. In addition, in the semiconductor device 10according to the present embodiment, while a certain user has anexclusive right, the user can reliably occupy a computing device.Therefore, if a sequence “keep requesting until you obtain an exclusiveright; and, after you obtain the exclusive right, extract computationresults after certain time, and obtain the values” is repeated withrespect to the semiconductor device of the configuration of the presentinvention, the user who uses the computing device can reliably obtaindesired calculation results. In this manner, users who share computingelements in the semiconductor device can equally use the computingelements.

Hereinabove, the preferred embodiment of the present invention has beenexplained. However, the present invention is not limited to the abovedescribed embodiment, various modifications can be made within the rangenot departing from the gist of the present invention, and it goeswithout saying that they are also included in the range of the presentinvention.

What is claimed is:
 1. A method, comprising: receiving at asemiconductor memory device of a single semiconductor chip, a firstcalibration command to adjust an impedance a first output circuit in afirst channel of the semiconductor memory device, wherein thesemiconductor memory device comprises the first channel and a secondchannel provided independently of the first channel to which mutuallydifferent external terminals including clock, data and command/addressterminals are allocated; performing a first calibration operationresponsive to the first calibration command; receiving a secondcalibration command to adjust impedance of a second output circuit inthe second channel; ignoring the second calibration command when thesecond calibration command has been received while the first calibrationoperation is being performed; receiving a first latch command in thefirst channel; and applying a first calibration code produced by thefirst calibration operation to the first output circuit in the firstchannel responsive to the first latch command.
 2. The method of claim 1,wherein the semiconductor memory device is a low power DRAM.
 3. Themethod of claim 2, wherein the low power DRAM is LPDDR4.
 4. The methodof claim 1, further comprising: receiving a third calibration commandfor the second output circuit; and performing a second calibrationoperation responsive to the third calibration command when the thirdcalibration command is received after the first calibration operationhas been finished.
 5. The method of claim 1, wherein the applying thefirst calibration code produced by the first calibration operation tothe first output circuit is executed without applying the firstcalibration code to the second output circuit.
 6. The method of claim 1further comprising: receiving a second latch command; and applying thefirst calibration code to the second output circuit responsive to thesecond latch command.
 7. The method of claim 6, wherein thesemiconductor memory device is coupled to a common resistor used in eachof the first and second calibration operations.
 8. An apparatuscomprising: a semiconductor memory device of a single semiconductor chipincluding a first channel and a second channel provided independently ofthe first channel; wherein the first channel includes a plurality offirst external terminals, a first command control circuit coupled to atleast one of the plurality of the first external terminals, a firstmemory cell array configured to be controlled by the first commandcontrol circuit and a first data output circuit configured to outputfirst data from the first memory cell array with first impedancecontrolled responsive to a first calibration code; wherein the secondchannel includes a plurality of second external terminals, a secondcommand control circuit coupled to at least one of the plurality of thesecond external terminals, a second memory cell array configured to becontrolled by the second command control circuit and a second dataoutput circuit configured to output second data from the second memorycell array with second impedance controlled responsive to a secondcalibration code; and wherein a calibration circuit provided in commonto the first channel and the second channel to provide the firstcalibration code responsive to a first calibration control signal fromthe first command control circuit and a second calibration coderesponsive to a second calibration control signal from the secondcommand control circuit.
 9. The apparatus of claim 8, wherein theplurality of first external terminals include first clock, first dataand first command/address terminals, and the plurality of secondexternal terminals include second clock, second data and secondcommand/address terminals.
 10. The apparatus of claim 8, wherein thesemiconductor memory device is low power DRAM.
 11. The apparatus ofclaim 10, wherein the low power DRAM is LPDDR4.
 12. The apparatus ofclaim 9, wherein a ZQ terminal is commonly used between the first andsecond channels.
 13. The apparatus of claim 8, wherein the first channelincludes a first data terminal coupled to the first data output circuitand a second data terminal coupled to the second data output circuit.14. The apparatus of claim 8, wherein the first command control circuitis configured to provide the first calibration control signal to thecalibration circuit responsive to receiving a first calibration commandthrough a first command terminal coupled to the first command controlcircuit and the second command control circuit is configured to providethe second calibration control signal to the calibration circuitresponsive to receiving a second calibration command through a secondcommand terminal coupled to the second command control circuit.
 15. Theapparatus of claim 14, wherein the calibration circuit includes a codegenerator and an arbiter coupled to the code generator, the arbiterbeing configured to cancel the second calibration control signal oncondition that the arbiter receives the second calibration controlsignal when the calibration circuit is in a calibration operationresponsive to the first calibration control signal.
 16. The apparatus ofclaim 15, wherein the arbiter is configured to cancel the firstcalibration control signal on condition that the arbiter receives thefirst calibration control signal when the calibration circuit is in acalibration operation responsive to the second calibration controlsignal.
 17. The apparatus of claim 16, wherein the arbiter is configuredto provide the first calibration code responsive to the firstcalibration control signal when the arbiter receives the firstcalibration control signal and the second calibration control signal ata substantially same time.
 18. The apparatus of claim 8, wherein thefirst channel includes a first relay circuit coupled between the firstdata output circuit and the calibration circuit and the second channelincludes a second relay circuit coupled between the second data outputcircuit and the calibration circuit.
 19. The apparatus of claim 18,wherein the first relay circuit is configured to store the firstcalibration code responsive to a first update control signal providedfrom the first command control circuit and the second relay circuit isconfigured to store the second calibration code responsive to a secondupdate control signal provided from the second command control circuit.20. A method comprising: receiving at a semiconductor memory device of asingle semiconductor chip, a first calibration command to adjust animpedance of a first output circuit in a first channel of thesemiconductor memory device, wherein the semiconductor memory devicecomprises the first channel and a second channel provided independentlyof the first channel to which mutually different external terminalsincluding clock, data and command/address terminals are allocated;performing a first calibration operation responsive to the firstcalibration command; receiving a second calibration command to adjustimpedance of a second output circuit in the second channel; ignoring thesecond calibration command when the second calibration command has beenreceived while the first calibration operation is being performed;receiving a first latch command in the first channel; supplying a firstcalibration code produced by the first calibration operation to thefirst output circuit in the first channel responsive to the first latchcommand, causing the first output circuit to change impedance responsiveto at least a portion of the first calibration code; and supplying thefirst calibration code to the second output circuit, causing the secondoutput circuit to change impedance responsive to at least a portion ofthe first calibration code.
 21. The method of claim 20 furthercomprising: performing a second calibration operation responsive to thesecond calibration command to produce a second calibration code when thesecond calibration command is received after the first calibrationoperation has been finished.
 22. The method of claim 20, wherein causingthe first output circuit to change impedance comprises activating one ormore pull up units in the first output circuit, wherein each of the pullup units is configured to change impedance responsive to a pull up codeof the first calibration code.